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Dacă locația dvs. nu este listată, selectați una dintre următoarele:

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  1. Acasă
  2. Produse
  3. DRAM
  4. DDR3
  5. K4B2G0846F-BYNB

Samsung Semiconductor - K4B2G0846F-BYNB

KEY Part #: K7359656

[20824buc Stoc]

    Numărul piesei:
    K4B2G0846F-BYNB
    Producător:
    Samsung Semiconductor
    Descriere detaliata:
    2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: LPDDR5, LPDDR4X, GDDR5, GDDR6, MODULE, DDR4, DDR3 and LPDDR4 ...
    Avantaj competitiv:
    We specialize in Samsung Semiconductor K4B2G0846F-BYNB electronic components. K4B2G0846F-BYNB can be shipped within 24 hours after order. If you have any demands for K4B2G0846F-BYNB, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    K4B2G0846F-BYNB Atributele produsului

    Numărul piesei : K4B2G0846F-BYNB
    Producător : Samsung Semiconductor
    Descriere : 2 Gb 256M x 8 2133 Mbps 1.35 V 0 ~ 85 °C 78FBGA Mass Production
    Serie : DDR3
    Densitate : 2 Gb
    Org. : 256M x 8
    Viteză : 2133 Mbps
    Voltaj : 1.35 V
    Temp. : 0 ~ 85 °C
    Pachet : 78FBGA
    Stare produs : Mass Production

    Cele mai recente știri

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