TRS8E65C,S1Q Preț (USD) [12497buc Stoc]
- 1 pcs$4.22191
- Numărul piesei:
- TRS8E65C,S1Q
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- DIODE SCHOTTKY 650V 8A TO220-2L.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - TRIAC, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - RF, Tranzistori - IGBT - Single, Modulele Power Driver, Tranzistori - IGBT - Arrays and Tiristoare - SCR-uri ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TRS8E65C,S1Q electronic components. TRS8E65C,S1Q can be shipped within 24 hours after order. If you have any demands for TRS8E65C,S1Q, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS8E65C,S1Q Atributele produsului
Numărul piesei :
TRS8E65C,S1Q
Producător :
Toshiba Semiconductor and Storage
Descriere :
DIODE SCHOTTKY 650V 8A TO220-2L
Serie :
-
Starea parțială :
Active
Tipul diodei :
Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) :
650V
Curent - mediu rectificat (Io) :
8A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă :
1.7V @ 8A
Viteză :
No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) :
0ns
Scurgeri reversibile de curent @ Vr :
90µA @ 650V
Capacitate @ Vr, F :
44pF @ 650V, 1MHz
Tipul de montare :
Through Hole
Pachet / Caz :
TO-220-2
Pachetul dispozitivelor furnizorilor :
TO-220-2L
Temperatura de funcționare - Junction :
175°C (Max)
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