Vishay Semiconductor Diodes Division - NS8KT-7000HE3/45

KEY Part #: K6428123

[8042buc Stoc]


    Numărul piesei:
    NS8KT-7000HE3/45
    Producător:
    Vishay Semiconductor Diodes Division
    Descriere detaliata:
    DIODE GEN PURP TO220AC.
    Timpul de livrare standard al producătorului:
    In stoc
    Termen de valabilitate:
    Un an
    Chip From:
    Hong Kong
    RoHS:
    Modalitate de plată:
    Mod de expediere:
    Categorii de familii:
    KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Tiristoare - TRIAC, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Arrays, Tranzistori - FET, MOSFET - Single, Tranzistori - FET, MOSFET - RF and Tranzistori - Bipolari (BJT) - Unic, pre-Biased ...
    Avantaj competitiv:
    We specialize in Vishay Semiconductor Diodes Division NS8KT-7000HE3/45 electronic components. NS8KT-7000HE3/45 can be shipped within 24 hours after order. If you have any demands for NS8KT-7000HE3/45, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NS8KT-7000HE3/45 Atributele produsului

    Numărul piesei : NS8KT-7000HE3/45
    Producător : Vishay Semiconductor Diodes Division
    Descriere : DIODE GEN PURP TO220AC
    Serie : Automotive, AEC-Q101
    Starea parțială : Obsolete
    Tipul diodei : Standard
    Tensiune - DC înapoi (Vr) (Max) : 800V
    Curent - mediu rectificat (Io) : 8A
    Tensiune - înainte (Vf) (Max) @ Dacă : 1.1V @ 8A
    Viteză : Standard Recovery >500ns, > 200mA (Io)
    Timp de recuperare invers (trr) : -
    Scurgeri reversibile de curent @ Vr : 10µA @ 800V
    Capacitate @ Vr, F : 55pF @ 4V, 1MHz
    Tipul de montare : Through Hole
    Pachet / Caz : TO-220-2
    Pachetul dispozitivelor furnizorilor : TO-220AC
    Temperatura de funcționare - Junction : -55°C ~ 150°C

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