[3961buc Stoc]
- Numărul piesei:
- SI4388DY-T1-GE3
- Producător:
- Vishay Siliconix
- Descriere detaliata:
- MOSFET 2N-CH 30V 10.7A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Dioduri - Redresoare - Arrays, Tiristoare - TRIAC, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Zener - Single, Dioduri - RF, Tranzistori - FET, MOSFET - Single and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in Vishay Siliconix SI4388DY-T1-GE3 electronic components. SI4388DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4388DY-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4388DY-T1-GE3 Atributele produsului
Numărul piesei :
SI4388DY-T1-GE3
Producător :
Vishay Siliconix
Descriere :
MOSFET 2N-CH 30V 10.7A 8-SOIC
Serie :
TrenchFET®
Starea parțială :
Obsolete
Tipul FET :
2 N-Channel (Half Bridge)
FET Feature :
Standard
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
10.7A, 11.3A
Rds On (Max) @ Id, Vgs :
16 mOhm @ 8A, 10V
Vgs (a) (Max) @ Id :
3V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
27nC @ 10V
Capacitate de intrare (Ciss) (Max) @ Vds :
946pF @ 15V
Putere - Max :
3.3W, 3.5W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
8-SO
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