TK31J60W,S1VQ Preț (USD) [11067buc Stoc]
- 1 pcs$4.09851
- 25 pcs$3.35902
- 100 pcs$3.03127
- 500 pcs$2.53971
- Numărul piesei:
- TK31J60W,S1VQ
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N CH 600V 30.8A TO-3PN.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - TRIAC, Dioduri - Zener - Arrays, Dioduri - Zener - Single, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - FET, MOSFET - Arrays, Tranzistori - IGBT - Arrays and Tiristoare - SCR - Module ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK31J60W,S1VQ electronic components. TK31J60W,S1VQ can be shipped within 24 hours after order. If you have any demands for TK31J60W,S1VQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK31J60W,S1VQ Atributele produsului
Numărul piesei :
TK31J60W,S1VQ
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N CH 600V 30.8A TO-3PN
Serie :
DTMOSIV
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
600V
Curent - scurgere continuă (Id) la 25 ° C :
30.8A (Ta)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
88 mOhm @ 15.4A, 10V
Vgs (a) (Max) @ Id :
3.7V @ 1.5mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
86nC @ 10V
Vgs (Max) :
±30V
Capacitate de intrare (Ciss) (Max) @ Vds :
3000pF @ 300V
FET Feature :
Super Junction
Distrugerea puterii (Max) :
230W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
TO-3P(N)
Pachet / Caz :
TO-3P-3, SC-65-3
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