[860buc Stoc]
- Numărul piesei:
- TPC8110(TE12L,Q,M)
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET P-CH 40V 8A SOP8 2-6J1B.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - FET, MOSFET - Arrays, Modulele Power Driver, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Zener - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tranzistori - Bipolari (BJT) - RF ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TPC8110(TE12L,Q,M) electronic components. TPC8110(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for TPC8110(TE12L,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TPC8110(TE12L,Q,M) Atributele produsului
Numărul piesei :
TPC8110(TE12L,Q,M)
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET P-CH 40V 8A SOP8 2-6J1B
Serie :
U-MOSIII
Starea parțială :
Obsolete
Tipul FET :
P-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
40V
Curent - scurgere continuă (Id) la 25 ° C :
8A (Ta)
Tensiunea de transmisie (valorile max. :
4V, 10V
Rds On (Max) @ Id, Vgs :
25 mOhm @ 4A, 10V
Vgs (a) (Max) @ Id :
2V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
48nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
2180pF @ 10V
FET Feature :
-
Distrugerea puterii (Max) :
1W (Ta)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-SOP (5.5x6.0)
Pachet / Caz :
8-SOIC (0.173", 4.40mm Width)
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