BSM25GD120DN2BOSA1 Preț (USD) [1020buc Stoc]
- 1 pcs$45.53010
- Numărul piesei:
- BSM25GD120DN2BOSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- IGBT 2 LOW POWER ECONO2-2.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - Module IGBT, Tranzistori - IGBT - Arrays, Dioduri - Zener - Arrays, Tiristoare - SCR - Module, Tranzistori - JFET-uri, Tranzistori - Unijuncții programabile and Tranzistori - IGBT - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies BSM25GD120DN2BOSA1 electronic components. BSM25GD120DN2BOSA1 can be shipped within 24 hours after order. If you have any demands for BSM25GD120DN2BOSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSM25GD120DN2BOSA1 Atributele produsului
Numărul piesei :
BSM25GD120DN2BOSA1
Producător :
Infineon Technologies
Descriere :
IGBT 2 LOW POWER ECONO2-2
Serie :
-
Starea parțială :
Not For New Designs
Tip IGBT :
-
configurație :
Full Bridge
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
35A
Putere - Max :
200W
Vce (pe) (Max) @ Vge, Ic :
3V @ 15V, 25A
Curentul curent - colector (maxim) :
800µA
Capacitate de intrare (Cies) @ Vce :
1.65nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Module
Pachetul dispozitivelor furnizorilor :
Module
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