Vishay Semiconductor Diodes Division - VS-20ETF12S-M3

KEY Part #: K6434246

VS-20ETF12S-M3 Preț (USD) [58167buc Stoc]

  • 1 pcs$0.67220
  • 1,000 pcs$0.60918

Numărul piesei:
VS-20ETF12S-M3
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 1.2KV 20A TO263AB. Rectifiers New Input Diodes - D2PAK-e3
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - RF, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Single, Dioduri - RF, Tranzistori - IGBT - Single and Tranzistori - Bipolari (BJT) - Arrays ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-20ETF12S-M3 electronic components. VS-20ETF12S-M3 can be shipped within 24 hours after order. If you have any demands for VS-20ETF12S-M3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-20ETF12S-M3 Atributele produsului

Numărul piesei : VS-20ETF12S-M3
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 1.2KV 20A TO263AB
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 1200V
Curent - mediu rectificat (Io) : 20A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.31V @ 20A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 400ns
Scurgeri reversibile de curent @ Vr : 100µA @ 1200V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : D2PAK
Temperatura de funcționare - Junction : -40°C ~ 150°C

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