BYG10M-E3/TR Preț (USD) [739474buc Stoc]
- 1 pcs$0.05002
- 1,800 pcs$0.04701
- 3,600 pcs$0.04231
- 5,400 pcs$0.03996
- 12,600 pcs$0.03643
- 45,000 pcs$0.03408
- Numărul piesei:
- BYG10M-E3/TR
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5 Amp 1000 Volt
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - FET, MOSFET - RF, Tranzistori - Module IGBT, Tranzistori - JFET-uri, Dioduri - Redresoare - Arrays, Dioduri - Zener - Arrays and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division BYG10M-E3/TR electronic components. BYG10M-E3/TR can be shipped within 24 hours after order. If you have any demands for BYG10M-E3/TR, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BYG10M-E3/TR Atributele produsului
Numărul piesei :
BYG10M-E3/TR
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE AVALANCHE 1KV 1.5A
Serie :
-
Starea parțială :
Active
Tipul diodei :
Avalanche
Tensiune - DC înapoi (Vr) (Max) :
1000V
Curent - mediu rectificat (Io) :
1.5A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.15V @ 1.5A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
4µs
Scurgeri reversibile de curent @ Vr :
1µA @ 1000V
Capacitate @ Vr, F :
-
Tipul de montare :
Surface Mount
Pachet / Caz :
DO-214AC, SMA
Pachetul dispozitivelor furnizorilor :
DO-214AC (SMA)
Temperatura de funcționare - Junction :
-55°C ~ 150°C
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