IPB180P04P403ATMA1 Preț (USD) [61370buc Stoc]
- 1 pcs$0.63713
- 1,000 pcs$0.58451
- Numărul piesei:
- IPB180P04P403ATMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET P-CH TO263-7.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - RF, Tranzistori - Module IGBT, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - RF, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Single, Tranzistori - Bipolari (BJT) - Single and Dioduri - Capacitate variabilă (Varicaps, Varactor ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPB180P04P403ATMA1 electronic components. IPB180P04P403ATMA1 can be shipped within 24 hours after order. If you have any demands for IPB180P04P403ATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPB180P04P403ATMA1 Atributele produsului
Numărul piesei :
IPB180P04P403ATMA1
Producător :
Infineon Technologies
Descriere :
MOSFET P-CH TO263-7
Serie :
Automotive, AEC-Q101, OptiMOS™
Starea parțială :
Active
Tipul FET :
P-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
40V
Curent - scurgere continuă (Id) la 25 ° C :
180A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
2.8 mOhm @ 100A, 10V
Vgs (a) (Max) @ Id :
4V @ 410µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
250nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
17640pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
150W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
PG-TO263-7-3
Pachet / Caz :
TO-263-7, D²Pak (6 Leads + Tab)
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