Vishay Semiconductor Diodes Division - 1N4150W-E3-08

KEY Part #: K6455777

1N4150W-E3-08 Preț (USD) [1945524buc Stoc]

  • 1 pcs$0.10678
  • 10 pcs$0.08741
  • 25 pcs$0.07309
  • 100 pcs$0.04631
  • 250 pcs$0.03575
  • 500 pcs$0.03048
  • 1,000 pcs$0.02072

Numărul piesei:
1N4150W-E3-08
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 50V 200MA SOD123. Diodes - General Purpose, Power, Switching 50 Volt 500mA 4ns
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - punți redresoare, Tiristoare - DIAC, SIDAC, Tranzistori - Bipolari (BJT) - RF, Tranzistori - FET, MOSFET - Arrays, Dioduri - Redresoare - Single, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Arrays and Tranzistori - FET, MOSFET - RF ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division 1N4150W-E3-08 electronic components. 1N4150W-E3-08 can be shipped within 24 hours after order. If you have any demands for 1N4150W-E3-08, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

1N4150W-E3-08 Atributele produsului

Numărul piesei : 1N4150W-E3-08
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 50V 200MA SOD123
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 50V
Curent - mediu rectificat (Io) : 200mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1V @ 200mA
Viteză : Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) : 4ns
Scurgeri reversibile de curent @ Vr : 100nA @ 50V
Capacitate @ Vr, F : 2.5pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : SOD-123
Pachetul dispozitivelor furnizorilor : SOD-123
Temperatura de funcționare - Junction : 150°C (Max)

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