Vishay Semiconductor Diodes Division - BYG10M-M3/TR3

KEY Part #: K6439792

BYG10M-M3/TR3 Preț (USD) [703168buc Stoc]

  • 1 pcs$0.05352
  • 15,000 pcs$0.05326

Numărul piesei:
BYG10M-M3/TR3
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE AVALANCHE 1KV 1.5A. Rectifiers 1.5A,1000V VGSC-STD Avalanche SMD
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - IGBT - Arrays, Dioduri - RF, Dioduri - Redresoare - Single, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - FET, MOSFET - RF and Tranzistori - Module IGBT ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division BYG10M-M3/TR3 electronic components. BYG10M-M3/TR3 can be shipped within 24 hours after order. If you have any demands for BYG10M-M3/TR3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BYG10M-M3/TR3 Atributele produsului

Numărul piesei : BYG10M-M3/TR3
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE AVALANCHE 1KV 1.5A
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Avalanche
Tensiune - DC înapoi (Vr) (Max) : 1000V
Curent - mediu rectificat (Io) : 1.5A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.15V @ 1.5A
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 4µs
Scurgeri reversibile de curent @ Vr : 1µA @ 1000V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : DO-214AC, SMA
Pachetul dispozitivelor furnizorilor : DO-214AC (SMA)
Temperatura de funcționare - Junction : -55°C ~ 150°C

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