IPD65R1K4CFDBTMA1 Preț (USD) [183123buc Stoc]
- 1 pcs$0.20198
- 2,500 pcs$0.16494
- Numărul piesei:
- IPD65R1K4CFDBTMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 650V 2.8A TO-252.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - IGBT - Single, Tiristoare - SCR - Module, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Single, Modulele Power Driver, Tranzistori - FET, MOSFET - RF and Dioduri - Zener - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPD65R1K4CFDBTMA1 electronic components. IPD65R1K4CFDBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD65R1K4CFDBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD65R1K4CFDBTMA1 Atributele produsului
Numărul piesei :
IPD65R1K4CFDBTMA1
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 650V 2.8A TO-252
Serie :
CoolMOS™
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
650V
Curent - scurgere continuă (Id) la 25 ° C :
2.8A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1A, 10V
Vgs (a) (Max) @ Id :
4.5V @ 100µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
262pF @ 100V
FET Feature :
-
Distrugerea puterii (Max) :
28.4W (Tc)
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
PG-TO252-3
Pachet / Caz :
TO-252-3, DPak (2 Leads + Tab), SC-63
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