Vishay Semiconductor Diodes Division - US1M-M3/61T

KEY Part #: K6454669

US1M-M3/61T Preț (USD) [854154buc Stoc]

  • 1 pcs$0.04330
  • 14,400 pcs$0.03160

Numărul piesei:
US1M-M3/61T
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 1KV 1A DO214AC. Rectifiers 1A,1000V,75NS,UF RECT,SMD
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Dioduri - Zener - Arrays, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - punți redresoare, Tiristoare - TRIAC and Tranzistori - Bipolari (BJT) - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division US1M-M3/61T electronic components. US1M-M3/61T can be shipped within 24 hours after order. If you have any demands for US1M-M3/61T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1M-M3/61T Atributele produsului

Numărul piesei : US1M-M3/61T
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 1KV 1A DO214AC
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 1000V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.7V @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 75ns
Scurgeri reversibile de curent @ Vr : 10µA @ 1000V
Capacitate @ Vr, F : 10pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-214AC, SMA
Pachetul dispozitivelor furnizorilor : DO-214AC (SMA)
Temperatura de funcționare - Junction : -55°C ~ 150°C

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