IRLR3110ZPBF Preț (USD) [664buc Stoc]
- 1 pcs$0.77349
- 10 pcs$0.69781
- 100 pcs$0.56076
- 500 pcs$0.43615
- 1,000 pcs$0.34184
- Numărul piesei:
- IRLR3110ZPBF
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 100V 42A DPAK.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - FET, MOSFET - Single, Dioduri - Zener - Single, Tranzistori - IGBT - Single, Tranzistori - FET, MOSFET - RF, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Single and Tranzistori - Bipolari (BJT) - Unic, pre-Biased ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRLR3110ZPBF electronic components. IRLR3110ZPBF can be shipped within 24 hours after order. If you have any demands for IRLR3110ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRLR3110ZPBF Atributele produsului
Numărul piesei :
IRLR3110ZPBF
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 100V 42A DPAK
Serie :
HEXFET®
Starea parțială :
Discontinued at Digi-Key
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
42A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
14 mOhm @ 38A, 10V
Vgs (a) (Max) @ Id :
2.5V @ 100µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
48nC @ 4.5V
Vgs (Max) :
±16V
Capacitate de intrare (Ciss) (Max) @ Vds :
3980pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
140W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
D-Pak
Pachet / Caz :
TO-252-3, DPak (2 Leads + Tab), SC-63
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