APT25GN120B2DQ2G Preț (USD) [9465buc Stoc]
- 1 pcs$4.37589
- 56 pcs$4.35412
- Numărul piesei:
- APT25GN120B2DQ2G
- Producător:
- Microsemi Corporation
- Descriere detaliata:
- IGBT 1200V 67A 272W TMAX.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Modulele Power Driver, Dioduri - Zener - Arrays, Dioduri - Redresoare - Single, Tranzistori - Module IGBT, Tranzistori - JFET-uri and Dioduri - Redresoare - Arrays ...
- Avantaj competitiv:
- We specialize in Microsemi Corporation APT25GN120B2DQ2G electronic components. APT25GN120B2DQ2G can be shipped within 24 hours after order. If you have any demands for APT25GN120B2DQ2G, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
APT25GN120B2DQ2G Atributele produsului
Numărul piesei :
APT25GN120B2DQ2G
Producător :
Microsemi Corporation
Descriere :
IGBT 1200V 67A 272W TMAX
Serie :
-
Starea parțială :
Active
Tip IGBT :
NPT, Trench Field Stop
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
67A
Curent - colector pulsat (Icm) :
75A
Vce (pe) (Max) @ Vge, Ic :
2.1V @ 15V, 25A
Putere - Max :
272W
Comutarea energiei :
2.15µJ (off)
Tip de introducere :
Standard
Chargeul porții :
155nC
Td (pornire / oprire) @ 25 ° C :
22ns/280ns
Starea testului :
800V, 25A, 4.3 Ohm, 15V
Timp de recuperare invers (trr) :
-
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Through Hole
Pachet / Caz :
TO-247-3 Variant
Pachetul dispozitivelor furnizorilor :
-
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