SSM3K59CTB,L3F Preț (USD) [934746buc Stoc]
- 1 pcs$0.04375
- 10,000 pcs$0.04353
- Numărul piesei:
- SSM3K59CTB,L3F
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 40V 2A CST3B.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tiristoare - TRIAC, Tranzistori - IGBT - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - Redresoare - Single, Dioduri - punți redresoare, Tiristoare - DIAC, SIDAC and Dioduri - Zener - Single ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage SSM3K59CTB,L3F electronic components. SSM3K59CTB,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K59CTB,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SSM3K59CTB,L3F Atributele produsului
Numărul piesei :
SSM3K59CTB,L3F
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 40V 2A CST3B
Serie :
U-MOSVII-H
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
40V
Curent - scurgere continuă (Id) la 25 ° C :
2A (Ta)
Tensiunea de transmisie (valorile max. :
1.8V, 8V
Rds On (Max) @ Id, Vgs :
215 mOhm @ 1A, 8V
Vgs (a) (Max) @ Id :
1.2V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
1.1nC @ 4.2V
Vgs (Max) :
±12V
Capacitate de intrare (Ciss) (Max) @ Vds :
130pF @ 10V
FET Feature :
-
Distrugerea puterii (Max) :
1W (Ta)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
CST3B
Pachet / Caz :
3-SMD, No Lead
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