Vishay Semiconductor Diodes Division - VB20120S-E3/8W

KEY Part #: K6437185

VB20120S-E3/8W Preț (USD) [89567buc Stoc]

  • 1 pcs$0.43655
  • 800 pcs$0.40888

Numărul piesei:
VB20120S-E3/8W
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE SCHOTTKY 120V 20A TO263AB. Schottky Diodes & Rectifiers 20 Amp 120 Volt Single TrenchMOS
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - RF, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Single, Dioduri - Zener - Arrays, Dioduri - RF and Tiristoare - TRIAC ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VB20120S-E3/8W electronic components. VB20120S-E3/8W can be shipped within 24 hours after order. If you have any demands for VB20120S-E3/8W, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VB20120S-E3/8W Atributele produsului

Numărul piesei : VB20120S-E3/8W
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE SCHOTTKY 120V 20A TO263AB
Serie : TMBS®
Starea parțială : Active
Tipul diodei : Schottky
Tensiune - DC înapoi (Vr) (Max) : 120V
Curent - mediu rectificat (Io) : 20A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.12V @ 20A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : -
Scurgeri reversibile de curent @ Vr : 300µA @ 120V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB
Temperatura de funcționare - Junction : -40°C ~ 150°C

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