VS-GB200TH120N Preț (USD) [197buc Stoc]
- 1 pcs$234.46046
- 12 pcs$216.03837
- Numărul piesei:
- VS-GB200TH120N
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- IGBT 1200V 360A 1136W INT-A-PAK.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - scop special, Tranzistori - Bipolari (BJT) - RF, Tranzistori - IGBT - Single, Tranzistori - IGBT - Arrays, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - punți redresoare, Tiristoare - SCR-uri and Tranzistori - Module IGBT ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division VS-GB200TH120N electronic components. VS-GB200TH120N can be shipped within 24 hours after order. If you have any demands for VS-GB200TH120N, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-GB200TH120N Atributele produsului
Numărul piesei :
VS-GB200TH120N
Producător :
Vishay Semiconductor Diodes Division
Descriere :
IGBT 1200V 360A 1136W INT-A-PAK
Serie :
-
Starea parțială :
Active
Tip IGBT :
-
configurație :
Half Bridge
Tensiune - emițător colector (Max) :
1200V
Curent - Colector (Ic) (Max) :
360A
Putere - Max :
1136W
Vce (pe) (Max) @ Vge, Ic :
2.35V @ 15V, 200A
Curentul curent - colector (maxim) :
5mA
Capacitate de intrare (Cies) @ Vce :
14.9nF @ 25V
Intrare :
Standard
Termistor NTC :
No
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Chassis Mount
Pachet / Caz :
Double INT-A-PAK (3 + 4)
Pachetul dispozitivelor furnizorilor :
Double INT-A-PAK
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