Toshiba Semiconductor and Storage - TK35A08N1,S4X

KEY Part #: K6397619

TK35A08N1,S4X Preț (USD) [88227buc Stoc]

  • 1 pcs$0.48500
  • 50 pcs$0.38892
  • 100 pcs$0.32190
  • 500 pcs$0.24963
  • 1,000 pcs$0.19708

Numărul piesei:
TK35A08N1,S4X
Producător:
Toshiba Semiconductor and Storage
Descriere detaliata:
MOSFET N-CH 80V 35A TO-220.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Module IGBT, Tranzistori - FET, MOSFET - Single, Dioduri - RF, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - FET, MOSFET - RF, Tiristoare - DIAC, SIDAC and Tranzistori - Bipolari (BJT) - Unic, pre-Biased ...
Avantaj competitiv:
We specialize in Toshiba Semiconductor and Storage TK35A08N1,S4X electronic components. TK35A08N1,S4X can be shipped within 24 hours after order. If you have any demands for TK35A08N1,S4X, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK35A08N1,S4X Atributele produsului

Numărul piesei : TK35A08N1,S4X
Producător : Toshiba Semiconductor and Storage
Descriere : MOSFET N-CH 80V 35A TO-220
Serie : U-MOSVIII-H
Starea parțială : Active
Tipul FET : N-Channel
Tehnologie : MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) : 80V
Curent - scurgere continuă (Id) la 25 ° C : 35A (Tc)
Tensiunea de transmisie (valorile max. : 10V
Rds On (Max) @ Id, Vgs : 12.2 mOhm @ 17.5A, 10V
Vgs (a) (Max) @ Id : 4V @ 300µA
Chargeul prin poștă (Qg) (Max) @ Vgs : 25nC @ 10V
Vgs (Max) : ±20V
Capacitate de intrare (Ciss) (Max) @ Vds : 1700pF @ 40V
FET Feature : -
Distrugerea puterii (Max) : 30W (Tc)
Temperatura de Operare : 150°C (TJ)
Tipul de montare : Through Hole
Pachetul dispozitivelor furnizorilor : TO-220SIS
Pachet / Caz : TO-220-3 Full Pack

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