VS-4ESH02-M3/86A Preț (USD) [370175buc Stoc]
- 1 pcs$0.09992
- 1,500 pcs$0.09241
- 3,000 pcs$0.08426
- 7,500 pcs$0.07882
- 10,500 pcs$0.07339
- Numărul piesei:
- VS-4ESH02-M3/86A
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 200V 4A TO277A. Rectifiers Hypfst Rct 4A 200V
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - scop special, Dioduri - RF, Tranzistori - Bipolari (BJT) - Single, Tiristoare - TRIAC, Tiristoare - SCR - Module, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tranzistori - Module IGBT ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division VS-4ESH02-M3/86A electronic components. VS-4ESH02-M3/86A can be shipped within 24 hours after order. If you have any demands for VS-4ESH02-M3/86A, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
VS-4ESH02-M3/86A Atributele produsului
Numărul piesei :
VS-4ESH02-M3/86A
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 200V 4A TO277A
Serie :
FRED Pt®
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
200V
Curent - mediu rectificat (Io) :
4A
Tensiune - înainte (Vf) (Max) @ Dacă :
930mV @ 4A
Viteză :
Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
20ns
Scurgeri reversibile de curent @ Vr :
2µA @ 200V
Capacitate @ Vr, F :
-
Tipul de montare :
Surface Mount
Pachet / Caz :
TO-277, 3-PowerDFN
Pachetul dispozitivelor furnizorilor :
TO-277A (SMPC)
Temperatura de funcționare - Junction :
-65°C ~ 175°C
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