IRFB4410PBF Preț (USD) [33519buc Stoc]
- 1 pcs$1.18108
- 10 pcs$1.01055
- 100 pcs$0.81212
- 500 pcs$0.63164
- 1,000 pcs$0.52336
- Numărul piesei:
- IRFB4410PBF
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 100V 96A TO-220AB.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - RF, Tranzistori - IGBT - Arrays, Dioduri - Redresoare - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Zener - Single, Modulele Power Driver, Tranzistori - Bipolari (BJT) - Arrays, pre-biased and Dioduri - Capacitate variabilă (Varicaps, Varactor ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRFB4410PBF electronic components. IRFB4410PBF can be shipped within 24 hours after order. If you have any demands for IRFB4410PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFB4410PBF Atributele produsului
Numărul piesei :
IRFB4410PBF
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 100V 96A TO-220AB
Serie :
HEXFET®
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
88A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
10 mOhm @ 58A, 10V
Vgs (a) (Max) @ Id :
4V @ 150µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
180nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
5150pF @ 50V
FET Feature :
-
Distrugerea puterii (Max) :
200W (Tc)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
TO-220AB
Pachet / Caz :
TO-220-3
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