IRF7329PBF Preț (USD) [4348buc Stoc]
- 1 pcs$0.63551
- 10 pcs$0.56402
- 100 pcs$0.44574
- 500 pcs$0.32700
- 1,000 pcs$0.25816
- Numărul piesei:
- IRF7329PBF
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET 2P-CH 12V 9.2A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Redresoare - Arrays, Tranzistori - IGBT - Arrays, Modulele Power Driver, Tiristoare - SCR - Module, Dioduri - Zener - Arrays and Dioduri - RF ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRF7329PBF electronic components. IRF7329PBF can be shipped within 24 hours after order. If you have any demands for IRF7329PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7329PBF Atributele produsului
Numărul piesei :
IRF7329PBF
Producător :
Infineon Technologies
Descriere :
MOSFET 2P-CH 12V 9.2A 8-SOIC
Serie :
HEXFET®
Starea parțială :
Discontinued at Digi-Key
Tipul FET :
2 P-Channel (Dual)
FET Feature :
Logic Level Gate
Scurgeți la sursa de tensiune (Vdss) :
12V
Curent - scurgere continuă (Id) la 25 ° C :
9.2A
Rds On (Max) @ Id, Vgs :
17 mOhm @ 9.2A, 4.5V
Vgs (a) (Max) @ Id :
900mV @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
57nC @ 4.5V
Capacitate de intrare (Ciss) (Max) @ Vds :
3450pF @ 10V
Putere - Max :
2W
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
Pachetul dispozitivelor furnizorilor :
8-SO
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