Diodes Incorporated - BAS116LPH4-7B

KEY Part #: K6456317

BAS116LPH4-7B Preț (USD) [1717880buc Stoc]

  • 1 pcs$0.02153
  • 10,000 pcs$0.01945
  • 30,000 pcs$0.01831
  • 50,000 pcs$0.01716
  • 100,000 pcs$0.01522

Numărul piesei:
BAS116LPH4-7B
Producător:
Diodes Incorporated
Descriere detaliata:
DIODE GEN PURP 85V 215MA 2DFN. Diodes - General Purpose, Power, Switching Switching Diode BVR X2-DFN1006-2,10K
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, Dioduri - RF, Tranzistori - Bipolari (BJT) - Single, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Arrays, Tranzistori - scop special, Tranzistori - IGBT - Single and Dioduri - Redresoare - Single ...
Avantaj competitiv:
We specialize in Diodes Incorporated BAS116LPH4-7B electronic components. BAS116LPH4-7B can be shipped within 24 hours after order. If you have any demands for BAS116LPH4-7B, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BAS116LPH4-7B Atributele produsului

Numărul piesei : BAS116LPH4-7B
Producător : Diodes Incorporated
Descriere : DIODE GEN PURP 85V 215MA 2DFN
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 85V
Curent - mediu rectificat (Io) : 215mA (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.25V @ 150mA
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 3µs
Scurgeri reversibile de curent @ Vr : 5nA @ 75V
Capacitate @ Vr, F : 1.5pF @ 0V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : 0402 (1006 Metric)
Pachetul dispozitivelor furnizorilor : X2-DFN1006-2
Temperatura de funcționare - Junction : -55°C ~ 150°C

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