Taiwan Semiconductor Corporation - S1JLHM2G

KEY Part #: K6437516

S1JLHM2G Preț (USD) [1699771buc Stoc]

  • 1 pcs$0.02176

Numărul piesei:
S1JLHM2G
Producător:
Taiwan Semiconductor Corporation
Descriere detaliata:
DIODE GEN PURP 600V 1A SUB SMA.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - FET, MOSFET - Arrays, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Zener - Single, Dioduri - punți redresoare, Dioduri - RF, Dioduri - Redresoare - Arrays and Dioduri - Redresoare - Single ...
Avantaj competitiv:
We specialize in Taiwan Semiconductor Corporation S1JLHM2G electronic components. S1JLHM2G can be shipped within 24 hours after order. If you have any demands for S1JLHM2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1JLHM2G Atributele produsului

Numărul piesei : S1JLHM2G
Producător : Taiwan Semiconductor Corporation
Descriere : DIODE GEN PURP 600V 1A SUB SMA
Serie : Automotive, AEC-Q101
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 600V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.1V @ 1A
Viteză : Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 1.8µs
Scurgeri reversibile de curent @ Vr : 5µA @ 600V
Capacitate @ Vr, F : 9pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-219AB
Pachetul dispozitivelor furnizorilor : Sub SMA
Temperatura de funcționare - Junction : -55°C ~ 175°C

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