SE10FJ-M3/I Preț (USD) [1397927buc Stoc]
- 1 pcs$0.02792
- 30,000 pcs$0.02778
- Numărul piesei:
- SE10FJ-M3/I
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V ESD Prot SMF Rectifier
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Tranzistori - Module IGBT, Tranzistori - FET, MOSFET - Single, Dioduri - Redresoare - Single, Tranzistori - Unijuncții programabile, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - FET, MOSFET - RF and Tranzistori - Bipolari (BJT) - RF ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division SE10FJ-M3/I electronic components. SE10FJ-M3/I can be shipped within 24 hours after order. If you have any demands for SE10FJ-M3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SE10FJ-M3/I Atributele produsului
Numărul piesei :
SE10FJ-M3/I
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 600V 1A DO219AB
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
600V
Curent - mediu rectificat (Io) :
1A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.05V @ 1A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
780ns
Scurgeri reversibile de curent @ Vr :
5µA @ 600V
Capacitate @ Vr, F :
7.5pF @ 4V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
DO-219AB
Pachetul dispozitivelor furnizorilor :
DO-219AB (SMF)
Temperatura de funcționare - Junction :
-55°C ~ 175°C
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