TK39N60W,S1VF Preț (USD) [8991buc Stoc]
- 1 pcs$5.04161
- 30 pcs$4.13406
- 120 pcs$3.73078
- 510 pcs$3.12580
- Numărul piesei:
- TK39N60W,S1VF
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N CH 600V 38.8A TO247.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Single, Dioduri - punți redresoare, Tranzistori - FET, MOSFET - Arrays, Dioduri - Redresoare - Single, Tranzistori - IGBT - Single and Tranzistori - Bipolari (BJT) - RF ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK39N60W,S1VF electronic components. TK39N60W,S1VF can be shipped within 24 hours after order. If you have any demands for TK39N60W,S1VF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK39N60W,S1VF Atributele produsului
Numărul piesei :
TK39N60W,S1VF
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N CH 600V 38.8A TO247
Serie :
DTMOSIV
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
600V
Curent - scurgere continuă (Id) la 25 ° C :
38.8A (Ta)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
65 mOhm @ 19.4A, 10V
Vgs (a) (Max) @ Id :
3.7V @ 1.9mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
110nC @ 10V
Vgs (Max) :
±30V
Capacitate de intrare (Ciss) (Max) @ Vds :
4100pF @ 300V
FET Feature :
Super Junction
Distrugerea puterii (Max) :
270W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
TO-247
Pachet / Caz :
TO-247-3
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