Toshiba Semiconductor and Storage - HN1D02FU,LF

KEY Part #: K6474670

HN1D02FU,LF Preț (USD) [1169017buc Stoc]

  • 1 pcs$0.03339
  • 3,000 pcs$0.03322
  • 6,000 pcs$0.02990
  • 15,000 pcs$0.02658
  • 30,000 pcs$0.02492
  • 75,000 pcs$0.02215

Numărul piesei:
HN1D02FU,LF
Producător:
Toshiba Semiconductor and Storage
Descriere detaliata:
DIODE ARRAY GP 80V 100MA US6. Diodes - General Purpose, Power, Switching US6-M8,
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tiristoare - TRIAC, Modulele Power Driver, Tranzistori - JFET-uri and Dioduri - Redresoare - Arrays ...
Avantaj competitiv:
We specialize in Toshiba Semiconductor and Storage HN1D02FU,LF electronic components. HN1D02FU,LF can be shipped within 24 hours after order. If you have any demands for HN1D02FU,LF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

HN1D02FU,LF Atributele produsului

Numărul piesei : HN1D02FU,LF
Producător : Toshiba Semiconductor and Storage
Descriere : DIODE ARRAY GP 80V 100MA US6
Serie : -
Starea parțială : Active
Configurarea diodelor : 2 Pair Common Cathode
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 80V
Curent - Mediu rectificat (Io) (pe diodă) : 100mA
Tensiune - înainte (Vf) (Max) @ Dacă : 1.2V @ 100mA
Viteză : Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) : 4ns
Scurgeri reversibile de curent @ Vr : 500nA @ 80V
Temperatura de funcționare - Junction : 125°C (Max)
Tipul de montare : Surface Mount
Pachet / Caz : 6-TSSOP, SC-88, SOT-363
Pachetul dispozitivelor furnizorilor : US6

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