[12964buc Stoc]
- Numărul piesei:
- IRF7807ZPBF
- Producător:
- Infineon Technologies
- Descriere detaliata:
- HEX/MOS N-CH 30V 11A 8-SOIC.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Single, Dioduri - RF, Tranzistori - FET, MOSFET - Arrays, Tranzistori - FET, MOSFET - RF, Modulele Power Driver, Tranzistori - Module IGBT and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IRF7807ZPBF electronic components. IRF7807ZPBF can be shipped within 24 hours after order. If you have any demands for IRF7807ZPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7807ZPBF Atributele produsului
Numărul piesei :
IRF7807ZPBF
Producător :
Infineon Technologies
Descriere :
HEX/MOS N-CH 30V 11A 8-SOIC
Serie :
HEXFET®
Starea parțială :
Discontinued at Digi-Key
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
30V
Curent - scurgere continuă (Id) la 25 ° C :
11A (Ta)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
13.8 mOhm @ 11A, 10V
Vgs (a) (Max) @ Id :
2.25V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
11nC @ 4.5V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
770pF @ 15V
FET Feature :
-
Distrugerea puterii (Max) :
2.5W (Ta)
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
8-SO
Pachet / Caz :
8-SOIC (0.154", 3.90mm Width)
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