[13419buc Stoc]
- Numărul piesei:
- HUF76633S3ST-F085
- Producător:
- ON Semiconductor
- Descriere detaliata:
- MOSFET N-CH 100V 39A TO-263AB.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - TRIAC, Dioduri - RF, Tranzistori - FET, MOSFET - RF, Modulele Power Driver, Dioduri - Zener - Single, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in ON Semiconductor HUF76633S3ST-F085 electronic components. HUF76633S3ST-F085 can be shipped within 24 hours after order. If you have any demands for HUF76633S3ST-F085, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HUF76633S3ST-F085 Atributele produsului
Numărul piesei :
HUF76633S3ST-F085
Producător :
ON Semiconductor
Descriere :
MOSFET N-CH 100V 39A TO-263AB
Serie :
Automotive, AEC-Q101, UltraFET™
Starea parțială :
Obsolete
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
100V
Curent - scurgere continuă (Id) la 25 ° C :
39A (Tc)
Tensiunea de transmisie (valorile max. :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
35 mOhm @ 39A, 10V
Vgs (a) (Max) @ Id :
3V @ 250µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
63nC @ 10V
Vgs (Max) :
±16V
Capacitate de intrare (Ciss) (Max) @ Vds :
1810pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
183W (Tj)
Temperatura de Operare :
-55°C ~ 175°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
D²PAK (TO-263AB)
Pachet / Caz :
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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