IDP30E65D1XKSA1 Preț (USD) [47232buc Stoc]
- 1 pcs$0.66478
- 10 pcs$0.59788
- 100 pcs$0.48065
- 500 pcs$0.39489
- 1,000 pcs$0.30951
- Numărul piesei:
- IDP30E65D1XKSA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- DIODE GEN PURP 650V 60A TO220-2. Diodes - General Purpose, Power, Switching IGBT PRODUCTS
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tiristoare - SCR-uri, Tranzistori - Module IGBT, Dioduri - Redresoare - Arrays, Tranzistori - Bipolari (BJT) - RF, Tranzistori - Unijuncții programabile, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased and Tranzistori - Bipolari (BJT) - Arrays ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IDP30E65D1XKSA1 electronic components. IDP30E65D1XKSA1 can be shipped within 24 hours after order. If you have any demands for IDP30E65D1XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDP30E65D1XKSA1 Atributele produsului
Numărul piesei :
IDP30E65D1XKSA1
Producător :
Infineon Technologies
Descriere :
DIODE GEN PURP 650V 60A TO220-2
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
650V
Curent - mediu rectificat (Io) :
60A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă :
1.7V @ 30A
Viteză :
Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
64ns
Scurgeri reversibile de curent @ Vr :
40µA @ 650V
Capacitate @ Vr, F :
-
Tipul de montare :
Through Hole
Pachet / Caz :
TO-220-2
Pachetul dispozitivelor furnizorilor :
PG-TO220-2-1
Temperatura de funcționare - Junction :
-40°C ~ 175°C
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