Vishay Semiconductor Diodes Division - FESB8CTHE3/81

KEY Part #: K6456413

FESB8CTHE3/81 Preț (USD) [112580buc Stoc]

  • 1 pcs$0.32854
  • 800 pcs$0.30772

Numărul piesei:
FESB8CTHE3/81
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 150V 8A TO263AB. Rectifiers 150 Volt 8.0A 35ns Single
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - Zener - Arrays, Tiristoare - DIAC, SIDAC, Tiristoare - TRIAC, Tranzistori - JFET-uri, Tranzistori - FET, MOSFET - Arrays, Dioduri - punți redresoare and Tranzistori - IGBT - Arrays ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division FESB8CTHE3/81 electronic components. FESB8CTHE3/81 can be shipped within 24 hours after order. If you have any demands for FESB8CTHE3/81, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FESB8CTHE3/81 Atributele produsului

Numărul piesei : FESB8CTHE3/81
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 150V 8A TO263AB
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 150V
Curent - mediu rectificat (Io) : 8A
Tensiune - înainte (Vf) (Max) @ Dacă : 950mV @ 8A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 35ns
Scurgeri reversibile de curent @ Vr : 10µA @ 150V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Pachetul dispozitivelor furnizorilor : TO-263AB
Temperatura de funcționare - Junction : -55°C ~ 150°C

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