Microsemi Corporation - APT50GN60BDQ2G

KEY Part #: K6422166

APT50GN60BDQ2G Preț (USD) [14536buc Stoc]

  • 1 pcs$3.45949
  • 10 pcs$3.11178
  • 25 pcs$2.83493
  • 100 pcs$2.55844
  • 250 pcs$2.35098
  • 500 pcs$2.14354
  • 1,000 pcs$1.86696

Numărul piesei:
APT50GN60BDQ2G
Producător:
Microsemi Corporation
Descriere detaliata:
IGBT 600V 107A 366W TO247.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Unijuncții programabile, Tranzistori - IGBT - Arrays, Dioduri - Zener - Arrays, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - Bipolari (BJT) - RF, Dioduri - Zener - Single, Dioduri - punți redresoare and Modulele Power Driver ...
Avantaj competitiv:
We specialize in Microsemi Corporation APT50GN60BDQ2G electronic components. APT50GN60BDQ2G can be shipped within 24 hours after order. If you have any demands for APT50GN60BDQ2G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

APT50GN60BDQ2G Atributele produsului

Numărul piesei : APT50GN60BDQ2G
Producător : Microsemi Corporation
Descriere : IGBT 600V 107A 366W TO247
Serie : -
Starea parțială : Active
Tip IGBT : Trench Field Stop
Tensiune - emițător colector (Max) : 600V
Curent - Colector (Ic) (Max) : 107A
Curent - colector pulsat (Icm) : 150A
Vce (pe) (Max) @ Vge, Ic : 1.85V @ 15V, 50A
Putere - Max : 366W
Comutarea energiei : 1185µJ (on), 1565µJ (off)
Tip de introducere : Standard
Chargeul porții : 325nC
Td (pornire / oprire) @ 25 ° C : 20ns/230ns
Starea testului : 400V, 50A, 4.3 Ohm, 15V
Timp de recuperare invers (trr) : -
Temperatura de Operare : -55°C ~ 175°C (TJ)
Tipul de montare : Through Hole
Pachet / Caz : TO-247-3
Pachetul dispozitivelor furnizorilor : TO-247 [B]

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