Micron Technology Inc. - MT47H128M8SH-25E AAT:M

KEY Part #: K936875

MT47H128M8SH-25E AAT:M Preț (USD) [15327buc Stoc]

  • 1 pcs$3.00455
  • 1,518 pcs$2.98960

Numărul piesei:
MT47H128M8SH-25E AAT:M
Producător:
Micron Technology Inc.
Descriere detaliata:
IC DRAM 1G PARALLEL 60FBGA.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Memorie - Baterii, PMIC - Regulatoare de tensiune - Linear, Procesare liniară - video, Logic - Multivibratori, PMIC - Drivere LED, IC Chips, Embedded - Microcontrolere - aplicație specifică and Achiziția de date - ADC / DAC - scop special ...
Avantaj competitiv:
We specialize in Micron Technology Inc. MT47H128M8SH-25E AAT:M electronic components. MT47H128M8SH-25E AAT:M can be shipped within 24 hours after order. If you have any demands for MT47H128M8SH-25E AAT:M, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MT47H128M8SH-25E AAT:M Atributele produsului

Numărul piesei : MT47H128M8SH-25E AAT:M
Producător : Micron Technology Inc.
Descriere : IC DRAM 1G PARALLEL 60FBGA
Serie : -
Starea parțială : Last Time Buy
Tip de memorie : Volatile
Formatul memoriei : DRAM
Tehnologie : SDRAM - DDR2
Capacitate de memorie : 1Gb (128M x 8)
Frecvența ceasului : 400MHz
Scrieți durata ciclului - Word, Page : 15ns
Timpul de acces : 400ps
Interfața de memorie : Parallel
Tensiune - Aprovizionare : 1.7V ~ 1.9V
Temperatura de Operare : -40°C ~ 105°C (TC)
Tipul de montare : Surface Mount
Pachet / Caz : 60-TFBGA
Pachetul dispozitivelor furnizorilor : 60-FBGA (10x18)

Poți fi, de asemenea, interesat
  • 71V30S55TFG8

    IDT, Integrated Device Technology Inc

    IC SRAM 8K PARALLEL 64TQFP. SRAM 1Kx8 ASYNCHRONOUS 3.3V DUAL-PORT RAM

  • AT28C256E-15SU

    Microchip Technology

    IC EEPROM 256K PARALLEL 28SOIC. EEPROM 256K HI-ENDURANCE SDP- 150NS IND TEMP

  • IS61LP6432A-133TQLI

    ISSI, Integrated Silicon Solution Inc

    IC SRAM 2M PARALLEL 100TQFP. SRAM 2Mb 64Kx32 133Mhz Sync SRAM 3.3v

  • 71V25761S183PFGI

    IDT, Integrated Device Technology Inc

    IC SRAM 4.5M PARALLEL 100TQFP. SRAM 128Kx36 SYNC 3.3V PIPELINED BURST SRAM

  • W29N04GZBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x8

  • W29N04GWBIBA

    Winbond Electronics

    IC FLASH 4G PARALLEL 63VFBGA. NAND Flash 4G-bit NAND flash, 1.8V, 4-bit ECC, 1.8V, x16