Comchip Technology - CDBJFSC8650-G

KEY Part #: K6441923

CDBJFSC8650-G Preț (USD) [21647buc Stoc]

  • 1 pcs$1.90382

Numărul piesei:
CDBJFSC8650-G
Producător:
Comchip Technology
Descriere detaliata:
DIODE SILICON CARBIDE POWER SCHO. Schottky Diodes & Rectifiers SiC POWER SCHOTTKY 8A 650V
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - RF, Modulele Power Driver, Tranzistori - IGBT - Arrays, Tiristoare - SCR - Module, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Arrays, Dioduri - Zener - Single and Tranzistori - scop special ...
Avantaj competitiv:
We specialize in Comchip Technology CDBJFSC8650-G electronic components. CDBJFSC8650-G can be shipped within 24 hours after order. If you have any demands for CDBJFSC8650-G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CDBJFSC8650-G Atributele produsului

Numărul piesei : CDBJFSC8650-G
Producător : Comchip Technology
Descriere : DIODE SILICON CARBIDE POWER SCHO
Serie : -
Starea parțială : Active
Tipul diodei : Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) : 650V
Curent - mediu rectificat (Io) : 8A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.7V @ 8A
Viteză : No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) : 0ns
Scurgeri reversibile de curent @ Vr : 100µA @ 650V
Capacitate @ Vr, F : 560pF @ 0V, 1MHz
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2 Full Pack
Pachetul dispozitivelor furnizorilor : TO-220F
Temperatura de funcționare - Junction : -55°C ~ 175°C

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