Vishay Semiconductor Diodes Division - VS-6ESH02-M3/87A

KEY Part #: K6431200

VS-6ESH02-M3/87A Preț (USD) [422523buc Stoc]

  • 1 pcs$0.08908
  • 6,500 pcs$0.08864

Numărul piesei:
VS-6ESH02-M3/87A
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 200V 6A TO277A. Rectifiers Hypfst Rct 6A 200V
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - FET, MOSFET - Arrays, Dioduri - RF, Tiristoare - TRIAC, Tranzistori - IGBT - Arrays, Tranzistori - Module IGBT, Tranzistori - Unijuncții programabile, Tranzistori - Bipolari (BJT) - RF and Tranzistori - Bipolari (BJT) - Arrays, pre-biased ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division VS-6ESH02-M3/87A electronic components. VS-6ESH02-M3/87A can be shipped within 24 hours after order. If you have any demands for VS-6ESH02-M3/87A, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

VS-6ESH02-M3/87A Atributele produsului

Numărul piesei : VS-6ESH02-M3/87A
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 200V 6A TO277A
Serie : FRED Pt®
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 200V
Curent - mediu rectificat (Io) : 6A
Tensiune - înainte (Vf) (Max) @ Dacă : 940mV @ 6A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 22ns
Scurgeri reversibile de curent @ Vr : 2µA @ 200V
Capacitate @ Vr, F : -
Tipul de montare : Surface Mount
Pachet / Caz : TO-277, 3-PowerDFN
Pachetul dispozitivelor furnizorilor : TO-277A (SMPC)
Temperatura de funcționare - Junction : -65°C ~ 175°C

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