IPS65R1K4C6AKMA1 Preț (USD) [88227buc Stoc]
- 1 pcs$0.40556
- 10 pcs$0.33934
- 100 pcs$0.26827
- 500 pcs$0.20806
- 1,000 pcs$0.16426
- Numărul piesei:
- IPS65R1K4C6AKMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET N-CH 650V 3.2A TO-251.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - scop special, Tranzistori - IGBT - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor, Dioduri - RF, Tiristoare - DIAC, SIDAC, Tranzistori - FET, MOSFET - Single and Dioduri - Redresoare - Arrays ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPS65R1K4C6AKMA1 electronic components. IPS65R1K4C6AKMA1 can be shipped within 24 hours after order. If you have any demands for IPS65R1K4C6AKMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPS65R1K4C6AKMA1 Atributele produsului
Numărul piesei :
IPS65R1K4C6AKMA1
Producător :
Infineon Technologies
Descriere :
MOSFET N-CH 650V 3.2A TO-251
Serie :
CoolMOS™
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
650V
Curent - scurgere continuă (Id) la 25 ° C :
3.2A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1A, 10V
Vgs (a) (Max) @ Id :
3.5V @ 100µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
10.5nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
225pF @ 100V
FET Feature :
-
Distrugerea puterii (Max) :
28W (Tc)
Temperatura de Operare :
-55°C ~ 150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
PG-TO251-3
Pachet / Caz :
TO-251-3 Stub Leads, IPak
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