1SS307E,L3F Preț (USD) [3127807buc Stoc]
- 1 pcs$0.19775
- 10 pcs$0.14040
- 25 pcs$0.11533
- 100 pcs$0.09223
- 250 pcs$0.06706
- 500 pcs$0.05449
- 1,000 pcs$0.04192
- 2,500 pcs$0.03773
- Numărul piesei:
- 1SS307E,L3F
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- DIODE GEN PURP 80V 100MA SC79. Diodes - General Purpose, Power, Switching Switching diode SNG Low leak current
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Dioduri - punți redresoare, Tranzistori - IGBT - Single, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Capacitate variabilă (Varicaps, Varactor and Tiristoare - DIAC, SIDAC ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage 1SS307E,L3F electronic components. 1SS307E,L3F can be shipped within 24 hours after order. If you have any demands for 1SS307E,L3F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1SS307E,L3F Atributele produsului
Numărul piesei :
1SS307E,L3F
Producător :
Toshiba Semiconductor and Storage
Descriere :
DIODE GEN PURP 80V 100MA SC79
Serie :
-
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
80V
Curent - mediu rectificat (Io) :
100mA
Tensiune - înainte (Vf) (Max) @ Dacă :
1.3V @ 100mA
Viteză :
Small Signal =< 200mA (Io), Any Speed
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
10nA @ 80V
Capacitate @ Vr, F :
6pF @ 0V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
SC-79, SOD-523
Pachetul dispozitivelor furnizorilor :
SC-79
Temperatura de funcționare - Junction :
150°C (Max)
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