IPN60R3K4CEATMA1 Preț (USD) [514616buc Stoc]
- 1 pcs$0.07187
- 3,000 pcs$0.06317
- Numărul piesei:
- IPN60R3K4CEATMA1
- Producător:
- Infineon Technologies
- Descriere detaliata:
- MOSFET NCH 600V 2.6A SOT223.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Dioduri - Zener - Single, Tranzistori - IGBT - Single, Tranzistori - Bipolari (BJT) - Arrays, Tiristoare - TRIAC, Dioduri - Redresoare - Arrays, Modulele Power Driver, Tranzistori - FET, MOSFET - Single and Dioduri - RF ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IPN60R3K4CEATMA1 electronic components. IPN60R3K4CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPN60R3K4CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPN60R3K4CEATMA1 Atributele produsului
Numărul piesei :
IPN60R3K4CEATMA1
Producător :
Infineon Technologies
Descriere :
MOSFET NCH 600V 2.6A SOT223
Serie :
CoolMOS™
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
600V
Curent - scurgere continuă (Id) la 25 ° C :
2.6A (Tc)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
3.4 Ohm @ 500mA, 10V
Vgs (a) (Max) @ Id :
3.5V @ 40µA
Chargeul prin poștă (Qg) (Max) @ Vgs :
4.6nC @ 10V
Vgs (Max) :
±20V
Capacitate de intrare (Ciss) (Max) @ Vds :
93pF @ 100V
FET Feature :
Super Junction
Distrugerea puterii (Max) :
5W (Tc)
Temperatura de Operare :
-40°C ~ 150°C (TJ)
Tipul de montare :
Surface Mount
Pachetul dispozitivelor furnizorilor :
PG-SOT223
Pachet / Caz :
SOT-223-3
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