Vishay Semiconductor Diodes Division - US1J-E3/5AT

KEY Part #: K6454961

US1J-E3/5AT Preț (USD) [885871buc Stoc]

  • 1 pcs$0.04175
  • 7,500 pcs$0.03508
  • 15,000 pcs$0.03199
  • 37,500 pcs$0.02993
  • 52,500 pcs$0.02752

Numărul piesei:
US1J-E3/5AT
Producător:
Vishay Semiconductor Diodes Division
Descriere detaliata:
DIODE GEN PURP 600V 1A DO214AC. Rectifiers 600 Volt 1.0A 75ns 30 Amp IFSM
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - scop special, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Dioduri - Zener - Arrays, Tranzistori - Unijuncții programabile, Tranzistori - FET, MOSFET - Arrays and Tranzistori - IGBT - Single ...
Avantaj competitiv:
We specialize in Vishay Semiconductor Diodes Division US1J-E3/5AT electronic components. US1J-E3/5AT can be shipped within 24 hours after order. If you have any demands for US1J-E3/5AT, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1J-E3/5AT Atributele produsului

Numărul piesei : US1J-E3/5AT
Producător : Vishay Semiconductor Diodes Division
Descriere : DIODE GEN PURP 600V 1A DO214AC
Serie : -
Starea parțială : Active
Tipul diodei : Standard
Tensiune - DC înapoi (Vr) (Max) : 600V
Curent - mediu rectificat (Io) : 1A
Tensiune - înainte (Vf) (Max) @ Dacă : 1.7V @ 1A
Viteză : Fast Recovery =< 500ns, > 200mA (Io)
Timp de recuperare invers (trr) : 75ns
Scurgeri reversibile de curent @ Vr : 10µA @ 600V
Capacitate @ Vr, F : 10pF @ 4V, 1MHz
Tipul de montare : Surface Mount
Pachet / Caz : DO-214AC, SMA
Pachetul dispozitivelor furnizorilor : DO-214AC (SMA)
Temperatura de funcționare - Junction : -55°C ~ 150°C

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