GeneSiC Semiconductor - GC10MPS12-220

KEY Part #: K6433306

GC10MPS12-220 Preț (USD) [7838buc Stoc]

  • 1 pcs$5.25755

Numărul piesei:
GC10MPS12-220
Producător:
GeneSiC Semiconductor
Descriere detaliata:
SIC DIODE 1200V 10A TO-220-2.
Timpul de livrare standard al producătorului:
In stoc
Termen de valabilitate:
Un an
Chip From:
Hong Kong
RoHS:
Modalitate de plată:
Mod de expediere:
Categorii de familii:
KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - Bipolari (BJT) - Single, Tranzistori - Module IGBT, Tranzistori - Bipolari (BJT) - Arrays, Tranzistori - IGBT - Arrays, Tranzistori - scop special, Tranzistori - IGBT - Single, Tiristoare - TRIAC and Dioduri - Redresoare - Single ...
Avantaj competitiv:
We specialize in GeneSiC Semiconductor GC10MPS12-220 electronic components. GC10MPS12-220 can be shipped within 24 hours after order. If you have any demands for GC10MPS12-220, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

GC10MPS12-220 Atributele produsului

Numărul piesei : GC10MPS12-220
Producător : GeneSiC Semiconductor
Descriere : SIC DIODE 1200V 10A TO-220-2
Serie : -
Starea parțială : Active
Tipul diodei : Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) : 1200V
Curent - mediu rectificat (Io) : 54A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă : 1.8V @ 10A
Viteză : No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) : 0ns
Scurgeri reversibile de curent @ Vr : 10µA @ 1200V
Capacitate @ Vr, F : 660pF @ 1V, 1MHz
Tipul de montare : Through Hole
Pachet / Caz : TO-220-2
Pachetul dispozitivelor furnizorilor : TO-220-2
Temperatura de funcționare - Junction : -55°C ~ 175°C
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