[3322buc Stoc]
- Numărul piesei:
- IDC08S60CEX1SA2
- Producător:
- Infineon Technologies
- Descriere detaliata:
- DIODE SIC 600V 8A SAWN WAFER.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - JFET-uri, Dioduri - Redresoare - Arrays, Tranzistori - FET, MOSFET - Single, Tranzistori - Bipolari (BJT) - Unic, pre-Biased, Tranzistori - IGBT - Arrays, Tranzistori - Unijuncții programabile, Tranzistori - Bipolari (BJT) - Arrays, pre-biased and Tranzistori - FET, MOSFET - Arrays ...
- Avantaj competitiv:
- We specialize in Infineon Technologies IDC08S60CEX1SA2 electronic components. IDC08S60CEX1SA2 can be shipped within 24 hours after order. If you have any demands for IDC08S60CEX1SA2, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IDC08S60CEX1SA2 Atributele produsului
Numărul piesei :
IDC08S60CEX1SA2
Producător :
Infineon Technologies
Descriere :
DIODE SIC 600V 8A SAWN WAFER
Serie :
CoolSiC™
Starea parțială :
Obsolete
Tipul diodei :
Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) :
600V
Curent - mediu rectificat (Io) :
8A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă :
1.7V @ 8A
Viteză :
No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) :
0ns
Scurgeri reversibile de curent @ Vr :
100µA @ 600V
Capacitate @ Vr, F :
310pF @ 1V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
Die
Pachetul dispozitivelor furnizorilor :
Die
Temperatura de funcționare - Junction :
-55°C ~ 175°C
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