TRS6E65C,S1AQ Preț (USD) [15205buc Stoc]
- 1 pcs$2.86009
- 50 pcs$2.84586
- Numărul piesei:
- TRS6E65C,S1AQ
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- DIODE SCHOTTKY 650V 6A TO220-2L.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Modulele Power Driver, Tiristoare - TRIAC, Tranzistori - FET, MOSFET - RF, Tranzistori - Module IGBT, Dioduri - Redresoare - Arrays, Tranzistori - Unijuncții programabile, Tranzistori - IGBT - Arrays and Dioduri - Redresoare - Single ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TRS6E65C,S1AQ electronic components. TRS6E65C,S1AQ can be shipped within 24 hours after order. If you have any demands for TRS6E65C,S1AQ, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TRS6E65C,S1AQ Atributele produsului
Numărul piesei :
TRS6E65C,S1AQ
Producător :
Toshiba Semiconductor and Storage
Descriere :
DIODE SCHOTTKY 650V 6A TO220-2L
Serie :
-
Starea parțială :
Not For New Designs
Tipul diodei :
Silicon Carbide Schottky
Tensiune - DC înapoi (Vr) (Max) :
650V
Curent - mediu rectificat (Io) :
6A (DC)
Tensiune - înainte (Vf) (Max) @ Dacă :
1.7V @ 6A
Viteză :
No Recovery Time > 500mA (Io)
Timp de recuperare invers (trr) :
0ns
Scurgeri reversibile de curent @ Vr :
90µA @ 650V
Capacitate @ Vr, F :
35pF @ 650V, 1MHz
Tipul de montare :
Through Hole
Pachet / Caz :
TO-220-2
Pachetul dispozitivelor furnizorilor :
TO-220-2L
Temperatura de funcționare - Junction :
175°C (Max)
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