TK8A55DA(STA4,Q,M) Preț (USD) [65399buc Stoc]
- 1 pcs$0.66096
- 50 pcs$0.65767
- Numărul piesei:
- TK8A55DA(STA4,Q,M)
- Producător:
- Toshiba Semiconductor and Storage
- Descriere detaliata:
- MOSFET N-CH 550V 7.5A TO-220SIS.
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Tiristoare - DIAC, SIDAC, Dioduri - Zener - Single, Dioduri - Redresoare - Single, Tranzistori - Bipolari (BJT) - Arrays, pre-biased, Tranzistori - JFET-uri, Tranzistori - Bipolari (BJT) - Single and Tranzistori - Bipolari (BJT) - RF ...
- Avantaj competitiv:
- We specialize in Toshiba Semiconductor and Storage TK8A55DA(STA4,Q,M) electronic components. TK8A55DA(STA4,Q,M) can be shipped within 24 hours after order. If you have any demands for TK8A55DA(STA4,Q,M), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK8A55DA(STA4,Q,M) Atributele produsului
Numărul piesei :
TK8A55DA(STA4,Q,M)
Producător :
Toshiba Semiconductor and Storage
Descriere :
MOSFET N-CH 550V 7.5A TO-220SIS
Serie :
π-MOSVII
Starea parțială :
Active
Tipul FET :
N-Channel
Tehnologie :
MOSFET (Metal Oxide)
Scurgeți la sursa de tensiune (Vdss) :
550V
Curent - scurgere continuă (Id) la 25 ° C :
7.5A (Ta)
Tensiunea de transmisie (valorile max. :
10V
Rds On (Max) @ Id, Vgs :
1.07 Ohm @ 3.8A, 10V
Vgs (a) (Max) @ Id :
4V @ 1mA
Chargeul prin poștă (Qg) (Max) @ Vgs :
16nC @ 10V
Vgs (Max) :
±30V
Capacitate de intrare (Ciss) (Max) @ Vds :
800pF @ 25V
FET Feature :
-
Distrugerea puterii (Max) :
40W (Tc)
Temperatura de Operare :
150°C (TJ)
Tipul de montare :
Through Hole
Pachetul dispozitivelor furnizorilor :
TO-220SIS
Pachet / Caz :
TO-220-3 Full Pack
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