1N6482HE3/96 Preț (USD) [665064buc Stoc]
- 1 pcs$0.05562
- 6,000 pcs$0.05085
- Numărul piesei:
- 1N6482HE3/96
- Producător:
- Vishay Semiconductor Diodes Division
- Descriere detaliata:
- DIODE GEN PURP 600V 1A DO213AB. Rectifiers 600 Volt 1.0 Amp 30 Amp IFSM
- Timpul de livrare standard al producătorului:
- In stoc
- Termen de valabilitate:
- Un an
- Chip From:
- Hong Kong
- RoHS:
- Modalitate de plată:
-
- Mod de expediere:
- Categorii de familii:
- KEY Components Co., LTD este un distribuitor de componente electronice care oferă categorii de produse, inclusiv: Tranzistori - IGBT - Arrays, Tranzistori - Bipolari (BJT) - Arrays, Dioduri - Redresoare - Arrays, Tranzistori - JFET-uri, Modulele Power Driver, Dioduri - Capacitate variabilă (Varicaps, Varactor, Tranzistori - Bipolari (BJT) - RF and Tranzistori - scop special ...
- Avantaj competitiv:
- We specialize in Vishay Semiconductor Diodes Division 1N6482HE3/96 electronic components. 1N6482HE3/96 can be shipped within 24 hours after order. If you have any demands for 1N6482HE3/96, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
1N6482HE3/96 Atributele produsului
Numărul piesei :
1N6482HE3/96
Producător :
Vishay Semiconductor Diodes Division
Descriere :
DIODE GEN PURP 600V 1A DO213AB
Serie :
SUPERECTIFIER®
Starea parțială :
Active
Tipul diodei :
Standard
Tensiune - DC înapoi (Vr) (Max) :
600V
Curent - mediu rectificat (Io) :
1A
Tensiune - înainte (Vf) (Max) @ Dacă :
1.1V @ 1A
Viteză :
Standard Recovery >500ns, > 200mA (Io)
Timp de recuperare invers (trr) :
-
Scurgeri reversibile de curent @ Vr :
10µA @ 600V
Capacitate @ Vr, F :
8pF @ 4V, 1MHz
Tipul de montare :
Surface Mount
Pachet / Caz :
DO-213AB, MELF (Glass)
Pachetul dispozitivelor furnizorilor :
DO-213AB
Temperatura de funcționare - Junction :
-65°C ~ 175°C
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